In-Situ and Ex-Situ Measurements on Silicon Thin Films Fabricated by Excimer Laser Annealing
نویسندگان
چکیده
منابع مشابه
ArF Excimer Laser Annealing of Polycrystalline Silicon Thin Film
Crystallization of amorphous silicon (a-Si) using excimer laser annealing (ELA) has been reported since 1994 by Watanabe group. It is known as the best method to fabricate a good poly-silicon because it can heat the film up to the melting point and, at the same time no thermal damage occur into the glass substrate (Carluccio et al., 1997; Matsumura and Oh, 1999). ELA technique is widely used to...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2006
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/48/1/177